K9F2G08U0M datasheet, K9F2G08U0M pdf, K9F2G08U0M data sheet, datasheet, data sheet, pdf, Samsung Electronic, FLASH MEMORY. K9F2G08U0M Datasheet PDF Download – FLASH MEMORY, K9F2G08U0M data sheet. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.
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An internal voltage detector disables all functions whenever Vcc is below about 1. A byte X8 device or word X16 device data register and a byte X8 device or word X16 device cache register are serially connected to each other.
To transfer data from cache registers to data registers, the device remains in Busy state for a short period of time tCBSY and has its cache darasheet ready for the next data-input while the internal programming gets started with the data loaded into data registers.
The contents of memory cells being altered are no longer valid, as the data will be partially m9f2g08u0m or erased. Random data input may be operated multiple times regardless m9f2g08u0m how many times it is done in a page. Since programming the last page does not employ caching, k9f2g080um program time has to be that of Page Program.
Devices with invalid block s have the same quality level as devices with all valid blocks and have ratasheet same AC and DC characteristics.
The number of consecutive partial page programming operation within the same page without an intervening erase operation must not exceed 4 times for main array X8 device: The internal high voltage generator is reset when the WP pin is active low. In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another page without need for transporting the data to and from the external buffer memory.
Two types of operations are available: The device may output random data in a page instead of the consecutive sequential data by writing random data output command. Flow chart to create invalid block table. It is an open drain output and does not float to high-z condition when the chip is deselected or when outputs are disabled. After writing the first set of data up to byte X8 device or word X16 device into the selected cache registers, Cache Satasheet command 15h instead of actual Page Program 10h is inputted to make cache registers free and to start internal program operation.
Optical Inspection Equipment AA In Block Erase operation, k9f2gg08u0m, only the three row address cycles are used. Please create an account or Sign in. The information regarding the invalid block s is so called as the invalid block information. The following possible failure modes should be considered to implement a highly reliable system. A page program cycle consists of a serial data loading period in which up to bytes X8 device or words X16 device of data may be loaded into the data register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell.
C Vcc Vss N. The Erase Confirm command D0h following the block address loading initiates the internal erasing process.
The memory array consists of separately erasable K-byte X8 device or 64K-word X16 device blocks. The bytes X8 k9f2g08i0m or words X16 device of data within the selected page are transferred to the data registers in less than 25? Data in the data page can be read out at 50ns 30ns, only X8 device cycle time per byte or word X16 device. The column address of next data, which is going to be out, may be changed to the address which follows random data output command.
Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved. We will also never share your payment details with your seller. Once the command is latched, it does not need to be written for the following page read operation.
The serial data loading period begins by inputting the Serial Data Input command 80hfollowed by the five cycle address inputs and then serial data loading. Exposure to dztasheet maximum rating conditions for extended periods may affect reliability. Random page address programming is prohibited.
Any intentional erasure of the original invalid block information is prohibited. Some commands require one bus cycle. The system design must be able to mask out the invalid block s via address mapping.
(PDF) K9F2G08U0M Datasheet download
But if the soure page has a bit error for charge loss, accumulated copy-back operations could also accumulate bit errors. When low, it indicates that a program, erase or random read operation is in process and returns to high state upon completion.
The device provides cache program in a block. Faithfully describe 24 hours delivery 7 days Changing or Refunding. To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block replacement. The memory array is made up of 32 cells that are serially connected to form a NAND structure.
The internal byte X8 device or word X16 device data registers are utilized as separate buffers for this operation and the system design gets more flexible.
K9F2G08U0M 데이터시트(PDF) – Samsung semiconductor
The benefit is especially obvious when a portion of a block is updated and the rest of the block also need to be copied to the newly assigned free block. The K9F2G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non volatility.
Data input cycle for modifying a portion or multiple distant portions of the source page is allowed as shown in Figure K9f2t08u0m the device has 1 page of cache memory, serial data input may be executed while data stored in data register are programmed into memory cell.