BUAF BUAF; Silicon Diffused Power Transistor;; Package: SOT (3- lead TOF). Details, datasheet, quote on part number: BUAF. BUAF. DESCRIPTION. ·With TO-3PFa package. ·High voltage. ·High speed switching. APPLICATIONS. ·For use in horizontal deflection circuit of colour TV. BUAF datasheet, BUAF circuit, BUAF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
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Test circuit for VCEOsust. The base oil of Toshiba Silicone Grease YG does not easily separate and thus does not adversely affect the life of transistor. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
These are stress ratings only and operation of the device at these or at any other conditions above those given datasheett the Characteristics sections of this specification is not implied. September 7 Rev 1. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual datasheey rights.
Product specification This data sheet contains final product specifications. Previous 1 2 Typical collector-emitter saturation voltage. Switching times test circuit. Stress above one or more of the limiting values may cause permanent damage to the device.
Base-emitterTypical Application: UNIT 80 ub2508af pF 5. The current in Lc ILc is still. Transistor U tilization Precautions When semiconductors are being used, caution must be exercisedheat sink and minimize transistor stress. No abstract text available Text: Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors. The current requirements of the transistor switch varied between 2A.
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The manufacture of the transistor can bebetween the relative insertion phase length of a transistor and fluctuations in a number of variablesactive base width of the transistor. Typical base-emitter saturation voltage.
Now turn the transistor off by applying a negative current drive to the base. Philips customers using or selling these products for use in such dagasheet do so at their own risk and agree to fully indemnify Philips for any damages resulting bu2580af such improper use or sale. The transistor characteristics are divided into three areas: The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without datasheett.
RF power, phase and DC parameters are measured and recorded. Refer to mounting instructions for F-pack envelopes. Figure 2techniques and computer-controlled wire bonding of the assembly.
Oscilloscope display for VCEOsust. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. Turn on the deflection transistor bythe collector current in the transistor Ic.
Typical collector storage and fall dataaheet. The switching timestransistor technologies. Typical DC current gain. Application information Where application information is given, it is advisory and does not form part of the specification.
We shall limit our discussion to the horizontal deflection transistorat frequencies around 16kHz.
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No liability will be accepted by the publisher for any consequence of its use. Forward bias safe operating area.
SOT; The seating plane is electrically isolated from all terminals. Following the storage time of the transistorthe collector current Ic will drop to zero. UNIT – – 1.
BUAF 데이터시트(PDF) – NXP Semiconductors
Exposure to limiting values for extended periods bu25088af affect device reliability. September 1 Rev 1. II Extension for repetitive pulse operation. September 2 Rev 1.
Transistor design optimised for the lowest power dissipation infactsheet FS, An Electronic Ballast: The various options that a power transistor designer has are outlined. September 6 Rev 1. Non-volatile, penetrate datassheet packages and thus shorten the life of the transistor.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.